Wyczyść filtry
  • P. P. Michałowski, M. Gębski, P. Śpiewak, W. Kołkowski, I. Pasternak, W. Głowadzka, M. Wasiak, T. Czyszanowski, W. Strupiński, Artifact-free secondary ion mass spectrometry profiling of a full vertical cavity surface emitting laser structure, Measurement: Journal of the International Measurement Confederation 225, 114003, 2024
     10.1016/j.measurement.2023.114003 
  • A. Janaszek, P. Wróbel, M. Dems, O. Ceylan, Y. Gurbuz, Ł. Kubiszyn, J. Piotrowski, R. Kotyński, Rigorous optical modelling of long-wavelength infrared photodetector with 2D subwavelength hole array in gold film, Opto-Electron. Rev. 32(1), e148831, 2024
     10.24425/opelre.2024.148831 
  • M. Ekielski, W. Głowadzka, K. Bogdanowicz, M. Rygała, M. Mikulicz, P. Śpiewak, M. Kowalski, M. Gębski, M. Motyka, A. Szerling, T. Czyszanowski, Monolithic High Contrast Grating Integrated with Metal: Infrared Electrode with Exceptionally High Conductivity and Transmission, Adv. Funct. Mater., 2312392, 2023
     10.1002/adfm.202312392 
  • P. Śpiewak, M. Gębski, W. Strupiński, T. Czyszanowski, W. Kołkowski, I. Pasternak, R. Sarzała, W. Nakwaski, M. Wasiak, Determination of electrical and thermal parameters of vertical-cavity surface-emitting lasers, Metrol. Meas. Syst. 30(3), 519-529, 2023
     10.24425/mms.2023.146417 
  • D. Dąbrówka, Wpływ warstwy ZnO na parametry pracy azotkowych laserów o emisji krawędziowej, Prz. Elektrotechniczn. 1(10), 243-246, 2023
     10.15199/48.2023.10.49 
  • E. Pruszyńska-Karbownik, D. Jandura, M. Dems, Ł. Zinkiewicz, A. Broda, M. Gębski, J. Muszalski, D. Pudis, J. Suffczyński, T. Czyszanowski, Concept of inverted refractive-index-contrast grating mirror and exemplary fabrication by 3D laser micro-printing, Nanophotonics 12(18), 3579–3588, 2023
     10.1515/nanoph-2023-0283 
  • P. Śpiewak, R. Sarzała, M. Wasiak, Impact of cavity design on the modulation properties of a GaAs-based VCSEL, Opt. Laser Technol. 163, 109373, 2023
     10.1016/j.optlastec.2023.109373 
  • M. Mikulicz, M. Rygała, T. Smołka, M. Janczak, M. Badura, A. Łozińska, A. Wolf, M. Emmerling, B. Ściana, S. Höfling, T. Czyszanowski, G. Sęk, M. Motyka, Enhancement of quantum cascade laser intersubband transitions via coupling to resonant discrete photonic modes of subwavelength gratings, Opt. Express 31(16), 26898, 2023
     10.1364/OE.496261 
  • A. Schade, A. Bader, T. Huber, S. Kuhn, T. Czyszanowski, A. Pfenning, M. Rygała, T. Smołka, M. Motyka, G. Sęk, F. Hartmann, S. Höfling, Monolithic high contrast grating on GaSb/AlAsSb based epitaxial structures for mid-infrared wavelength applications, Opt. Express 31(10), 16025, 2023
     10.1364/OE.487119 
  • M. Janczak, R. Sarzała, M. Dems, A. Kolek, M. Bugajski, W. Nakwaski, T. Czyszanowski, Threshold performance of pulse-operating quantum-cascade vertical-cavity surface-emitting lasers, Opt. Express 30(25), 45054, 2022
     10.1364/OE.474086 
  • P. Śpiewak, Komputerowa analiza zjawisk pojemnościowych w azotkowych laserach VCSEL, Prz. Elektrotechniczn. 1(10), 259-262, 2022
     10.15199/48.2022.10.58 
  • R. Sarzała, Analiza termiczna dwuwymiarowych matryc laserów VCSEL, Prz. Elektrotechniczn. 1(9), 168-171, 2022
     10.15199/48.2022.09.37 
  • D. Dąbrówka, Tłumienie efektu thermal crosstalk w linijkach laserowych, Prz. Elektrotechniczn. 1(9), 164-167, 2022
     10.15199/48.2022.09.36 
  • M. Drong, M. Dems, J. Perina, T. Fordos, H.-Y. Jaffres, K. Postava, H.-J. Drouhin, Time-Dependent Laser Cavity Perturbation Theory: Exploring Future Nano-Structured Photonic Devices in Semi-Analytic way, J. Lightwave Technol. 40(14), 4735-4745, 2022
     10.1109/JLT.2022.3168231 
  • D. Dąbrówka, R. Sarzała, M. Wasiak, A. Kafar, P. Perlin, K. Saba, Thermal analysis of a two-dimensional array with surface light emission based on nitride EEL lasers, Opto-Electron. Rev. 30, e144115, 2022
     10.24425/opelre.2022.144115 
  • A. Łaszcz, A. Czerwiński, E. Pruszyńska-Karbownik, M. Wzorek, D. Szmigiel, Sensitive Metal-Semiconductor Nanothermocouple Fabricated by FIB to Investigate Laser Beams with Nanometer Spatial Resolution, Ah. S. Sens. 22(1), 287, 2021
     10.3390/s22010287 
  • A. Kuźmicz, E. Pruszyńska-Karbownik, K. Pierściński, P. Gutowski, D. Pierścińska, K. Janus, K. Michalak, G. Sobczak, M. Sakowicz, Mid-infrared quantum cascade laser waveguides with non-vertical sidewalls, Infrared Physics and Technology 118, 103902, 2021
     10.1016/j.infrared.2021.103902 
  • E. Pruszyńska-Karbownik, M. Janczak, T. Czyszanowski, Extended bound states in the continuum in a one-dimensional grating implemented on a distributed Bragg reflector, Nanophotonics 11(1), 45-52, 2021
     10.1515/nanoph-2021-0478 
  • K.-B. Hong, T.-S. Chang, F. Hjort, N. Lindvall, W.-H. Hsieh, W.-H. Huang, P.-H. Tsai, T. Czyszanowski, Å. Haglund, T.-C. Lu, Monolithic high-index contrast grating mirror for a GaN-based vertical-cavity surface-emitting laser, Photonics Res. 9(11), 2214, 2021
     10.1364/PRJ.437911 
  • W. Głowadzka, M. Wasiak, T. Czyszanowski, True- and quasi-bound states in the continuum in one-dimensional gratings with broken up-down mirror symmetry, Nanophotonics 10(16), 3979-3993, 2021
     10.1515/nanoph-2021-0319 
  • M. Marciniak, T.-S. Chang, T.-C. Lu, F. Hjort, Å. Haglund, Ł. Marona, M. Gramala, P. Modrzyński, R. Kudrawiec, K. Sawicki, R. Bożek, W. Pacuski, J. Suffczyński, M. Gębski, A. Broda, J. Muszalski, J. A. Lott, T. Czyszanowski, Impact of Stripe Shape on the Reflectivity of Monolithic High Contrast Gratings, ACS Photonics 8(11), 3173-3184, 2021
     10.1021/acsphotonics.1c00850 
  • M. Dobrski, M. Wasiak, Effective method for approximating graded-refractive-index layers in optical simulations, Opt. Express 29(21), 34477, 2021
     10.1364/OE.434863 
  • L. Y. M. Tobing, A. M. Soehartono, A. D. Mueller, T. Czyszanowski, K. Yong, W. Fan, D. H. Zhang, Interplays of Dipole and Charge‐Transfer‐Plasmon Modes in Capacitively and Conductively Coupled Dimer with High Aspect Ratio Nanogaps, Adv. Opt. Mater. 9(22), 2100748, 2021
     10.1002/adom.202100748 
  • L. Y. M. Tobing, M. Wasiak, D. H. Zhang, W. Fan, T. Czyszanowski, Nearly total optical transmission of linearly polarized light through transparent electrode composed of GaSb monolithic high-contrast grating integrated with gold, Nanophotonics 10(15), 3823-3830, 2021
     10.1515/nanoph-2021-0286 
  • P. Komar, M. Gębski, J. A. Lott, M. Wasiak, Chromatic aberration in planar focusing mirrors based on a monolithic high contrast grating, Opt. Express 29(19), 30296, 2021
     10.1364/OE.433813 
  • A. Brejnak, M. Gębski, A. Sokół, M. Marciniak, M. Wasiak, J. Muszalski, J. A. Lott, I. Fischer, T. Czyszanowski, Boosting the output power of large-aperture lasers by breaking their circular symmetry, Optica 8(9), 1167, 2021
     10.1364/OPTICA.421753 
  • P. Komar, M. Gębski, J. A. Lott, T. Czyszanowski, M. Wasiak, Experimental Demonstration of Light Focusing Enabled by Monolithic High-Contrast Grating Mirrors, ACS Appl. Mater. Interfaces 13(21), 25533-25539, 2021
     10.1021/acsami.1c04871 
  • M. Dems, Convergence analysis of various factorization rules in the Fourier-Bessel basis for solving Maxwell equations using modal methods, Opt. Express 29(3), 4378, 2021
     10.1364/OE.413632 
  • M. Gębski, P. Śpiewak, W. Kołkowski, I. Pasternak, W. Głowadzka, W. Nakwaski, R. Sarzała, M. Wasiak, T. Czyszanowski, W. Strupiński, First vertical-cavity surface-emitting laser made entirely in Poland, B. Pol. Acad. Sci-tech. 69, e137272, 2021
     10.24425/bpasts.2021.137272 
  • A. Sokół, T. Czyszanowski, Nearly perfect transmission of unpolarized infrared radiation through a one-dimensional metal grating embedded in a monolithic high-contrast grating, Opt. Express 28(26), 38857, 2020
     10.1364/OE.411112 
  • R. Sarzała, P. Śpiewak, W. Nakwaski, M. Wasiak, Cavity designs for nitride VCSELs with dielectric DBRs operating efficiently at different temperatures, Opt. Laser Technol. 132, 106482, 2020
     10.1016/j.optlastec.2020.106482 
  • P. Komar, M. Gębski, T. Czyszanowski, M. Dems, M. Wasiak, Planar focusing reflectors based on monolithic high contrast gratings: design procedure and comparison with parabolic mirrors, Opt. Express 28(26), 38745, 2020
     10.1364/OE.404684 
  • Ł. Marona, P. Wiśniewski, M. Wzorek, J. Smalc-Koziorowska, S. Grzanka, A. Bojarska-Cieslinska, D. Schiavon, S. Stańczyk, A. Czerwiński, T. Czyszanowski, P. Perlin, Surface Photochemical Corrosion as a Mechanism for Fast Degradation of InGaN UV Laser Diodes, str. 52089-52094, Listopad 2020
     10.1021/acsami.0c11864 
  • M. Moczała-Dusanowska, Ł. Dusanowski, O. Iff, T. Huber, S. Kuhn, T. Czyszanowski, C. Schneider, S. Höfling, Strain-Tunable Single-Photon Source Based on a Circular Bragg Grating Cavity with Embedded Quantum Dots, ACS Photonics 7(12), 3474-3480, 2020
     10.1021/acsphotonics.0c01465 
  • D. Jandura, T. Czyszanowski, D. Pudis, M. Marciniak, M. Goraus, P. Urbancova, Polymer-based MHCG as selective mirror, Appl. Surf. Sci. 527, 146827, 2020
     10.1016/j.apsusc.2020.146827 
  • L. Frasunkiewicz, K. Panajotov, H. Thienpont, M. Dems, T. Czyszanowski, Transverse Mode Mixing in a Coupled-Cavity VCSEL, J. Lightwave Technol. 38(20), 5774-5782, 2020
     10.1109/JLT.2020.3004454 
  • H. Teisseyre, D. Jarosz, Ł. Marona, A. Bojarska, V. Ivanov, P. Perlin, T. Czyszanowski, Homoepitaxial ZnO/ZnMgO Laser Structures and Their Properties, Physica Status Solidi (A) Applications and Materials 218(1), 2000344, 2020
     10.1002/pssa.202000344 
  • T. Czyszanowski, A. Sokół, M. Dems, M. Wasiak, Transparent electrode employing deep–subwavelength monolithic high-contrast grating integrated with metal, Opt. Express 28(19), 28383, 2020
     10.1364/OE.400489 
  • M. Gębski, D. Dontsova, N. Haghighi, K. Nunna, R. Yanka, A. Johnson, R. Pelzel, J. A. Lott, Baseline 1300 nm dilute nitride VCSELs, str. 1952, Lipiec 2020
     10.1364/OSAC.396242 
  • M. Gębski, P.-S. Wong, M. Riaziat, J. A. Lott, 30 GHz bandwidth temperature stable 980 nm vertical-cavity surface-emitting lasers with AlAs/GaAs bottom distributed Bragg reflectors for optical data communication, JPhys Photonics 2(3), 035008, 2020
     10.1088/2515-7647/ab9420 
  • M. Marciniak, A. Broda, M. Gębski, M. Dems, J. Muszalski, A. Czerwiński, J. Ratajczak, Ł. Marona, W. Nakwaski, J. A. Lott, T. Czyszanowski, Tuning of reflection spectrum of a monolithic high-contrast grating by variation of its spatial dimensions, Opt. Express 28(14), 20967, 2020
     10.1364/OE.396693 
  • M. Wasiak, P. Śpiewak, N. Haghighi, M. Gębski, E. Pruszyńska-Karbownik, P. Komar, J. A. Lott, R. Sarzała, Numerical model for small-signal modulation response in vertical-cavity surface-emitting lasers, J. Phys. D: Appl. Phys. 53(34), 345101, 2020
     10.1088/1361-6463/ab8b94 
  • M. Więckowska, R. Sarzała, R. Ledzion, M. Dems, Impact of an Antiresonant Oxide Island on the Lasing of Lateral Modes in VCSELs, Materials 13(9), 2195, 2020
     10.3390/ma13092195 
  • T. Czyszanowski, M. Gębski, E. Pruszyńska-Karbownik, M. Wasiak, J. A. Lott, Monolithic high-contrast grating planar microcavities, Nanophotonics 9(4), 913-925, 2020
     10.1515/nanoph-2019-0520 
  • M. Marciniak, K. Hillebrandt, A. Komenda, R. Ledzion, P. Górski, The effect of the molecular weight on the electrooptic Kerr phenomenon of metyl silicon oil, str. Tom 1192 Nr 35 (2014): Scientific Bulletin. Physics, Marzec 2020
     10.34658/PHYSICS.2014.35.41-50 
  • M. Kuc, Ł. Piskorski, M. Dems, M. Wasiak, A. Sokół, R. Sarzała, T. Czyszanowski, Numerical Investigation of the Impact of ITO, AlInN, Plasmonic GaN and Top Gold Metalization on Semipolar Green EELs, Materials 13(6), 1444, 2020
     10.3390/ma13061444 
  • E. Pruszyńska-Karbownik, M. Gębski, M. Marciniak, J. A. Lott, T. Czyszanowski, A simple and precise method for the threshold current determination in vertical-cavity surface-emitting lasers, Opt. Appl. 50(2), 281-288, 2020
     10.37190/oa200211 
  • M. Kuc, A. Sokół, Ł. Piskorski, M. Dems, M. Wasiak, R. Sarzała, T. Czyszanowski, ITO layer as an optical confinement for nitride edge-emitting lasers, B. Pol. Acad. Sci-tech. 68, 147-154, 2020
     10.24425/bpasts.2020.131834 
  • P. Śpiewak, M. Wasiak, R. Sarzała, Impact of the active area position in a nitride tunnel junction vertical-cavity surface-emitting laser on its emission characteristics, Opt. Appl. 50(2), 301-310, 2020
     10.37190/OA200213 
  • R. Sarzała, P. Śpiewak, M. Wasiak, Influence of Resonator Length on Performance of Nitride TJ VCSEL, IEEE J. Quantum. Electron. 55(6), 1-9, 2019
     10.1109/JQE.2019.2946386 
  • A. Sokół, R. Sarzała, T. Czyszanowski, Monolithic High Contrast Grating Nitride-Based VECSEL, IEEE J. Sel. Topics in Quantum Electron. 25(6), 1-8, 2019
     10.1109/JSTQE.2019.2949457 
  • R. Sarzała, Ł. Piskorski, T. Czyszanowski, M. Dems, Influence of Various Bottom DBR Designs on the Thermal Properties of Blue Semiconductor-Metal Subwavelength-Grating VCSELs, Materials 12(19), 3235, 2019
     10.3390/ma12193235 
  • E. Pruszyńska-Karbownik, P. Gutowski, P. Karbownik, Optical polarization shift in beams emitted by quantum cascade lasers, Opt. Quant. Electron. 51(10), 325, 2019
     10.1007/s11082-019-2043-1 
  • R. Sarzała, Wpływ niedokładności wykonania wybranych elementów azotkowego lasera VCSEL na jego charakterystyki emisyjne, Prz. Elektrotechniczn. 1(9), 129-132, 2019
     10.15199/48.2019.09.26 
  • B. Mroziewicz, E. Pruszyńska-Karbownik, On the beam radiance of mid-infrared quantum cascade lasers–A review, Opto-Electron. Rev. 27(2), 161-173, 2019
     10.1016/j.opelre.2019.05.001 
  • M. Sakowicz, E. Pruszyńska-Karbownik, A. Kuźmicz, K. Janus, P. Gutowski, K. Michalak, Mid-Infrared Quantum Cascade Lasers With Nonuniformly Tapered Waveguides, J. Lightwave Technol. 37(10), 2324-2327, 2019
     10.1109/JLT.2019.2903263 
  • P. Komar, P. Śpiewak, M. Gębski, J. A. Lott, M. Wasiak, Current dependence of resistances and capacitances in a vertical-cavity surface-emitting laser, str. Vol 1219 No 38 (2017): Scientific Bulletin. Physics, Kwiecień 2019
     10.34658/physics.2017.38.53-60 
  • J. Poborska, D. Dąbrówka, M. Chwirot, R. Ledzion, M. Izdebski, W. Kucharczyk, Frequency dependence of the Kerr constant in Nynas Nytro 3000 oil determined by the polarimetric method, str. Tom 1224 Nr 39 (2018): Scientific Bulletin. Physics, Kwiecień 2019
     10.34658/PHYSICS.2018.39.37-44 
  • M. Więckowska, M. Dems, T. Czyszanowski, Comparison of methods for simulation of the optical properties of VCSEls, str. Vol 1219 No 38 (2017): Scientific Bulletin. Physics, Kwiecień 2019
     10.34658/PHYSICS.2017.38.71-80 
  • M. Gębski, J. A. Lott, T. Czyszanowski, Electrically injected VCSEL with a composite DBR and MHCG reflector, Opt. Express 27(5), 7139, 2019
     10.1364/OE.27.007139 
  • K. Pierściński, M. Bugajski, T. Czyszanowski, A. Kolek, M. Wesołowski, M. Kuc, R. Sarzała, M. Dems, M. Płuska, D. Pierścińska, W. Strupiński, A. Czerwiński, Coupled-cavity AlInAs/InGaAs/InP quantum cascade lasers fabricated by focused ion beam processing, JPhys Photonics 1(1), 015001, 2018
     10.1088/2515-7647/aaeca9 
  • L. Frasunkiewicz, T. Czyszanowski, H. Thienpont, K. Panajotov, Electrically tunable VCSEL with intra-cavity liquid crystal: Design, optimization, and analysis of polarization- and mode-stability, Opt. Commun. 427, 271-277, 2018
     10.1016/j.optcom.2018.06.065 
  • E. Chavez-Angel, N. Reuter, P. Komar, S. Heinz, U. Kolb, H.-J. Kleebe, G. Jakob, Subamorphous Thermal Conductivity of Crystalline Half-Heusler Superlattices, Nanosc. Microsc. Therm. 23(1), 1-9, 2018
     10.1080/15567265.2018.1505987 
  • R. Sarzała, Projekt azotkowego lasera VCSEL z bezpośrednim wstrzykiwaniem prądu do obszaru czynnego, Prz. Elektrotechniczn. 1(8), 3-6, 2018
     10.15199/48.2018.08.01 
  • M. Marciniak, Ł. Piskorski, M. Gębski, M. Dems, M. Wasiak, K. Panajotov, J. A. Lott, T. Czyszanowski, The Vertical-Cavity Surface-Emitting Laser as a Sensing Device, J. Lightwave Technol. 36(16), 3185-3192, 2018
     10.1109/JLT.2018.2834620 
  • M. Więckowska, T. Czyszanowski, G. Almuneau, M. Dems, Shaping vertical-cavity surface-emitting laser mode profiles with an antiresonant oxide island for improved single-mode emission, J. Opt. Soc. Am. B 35(9), 2259, 2018
     10.1364/JOSAB.35.002259 
  • R. Sarzała, M. Marciniak, T. Czyszanowski, Thermal properties of GaN-based semiconductor-metal subwavelength grating VCSELs and novel current injection scheme, J. Phys. D: Appl. Phys. 51(28), 285102, 2018
     10.1088/1361-6463/aac85a 
  • M. Wasiak, M. Motyka, T. Smołka, J. Ratajczak, A. Jasik, Absorption and dispersion in undoped epitaxial GaSb layer, Mater. Res. Express 5(2), 025907, 2018
     10.1088/2053-1591/aaae86 
  • T. Czyszanowski, Quantum-Cascade Vertical-Cavity Surface-Emitting Laser, IEEE Photon. Technol. Lett. 30(4), 351-354, 2018
     10.1109/LPT.2018.2789847 
  • M. Wasiak, M. Motyka, T. Smołka, J. Ratajczak, A. Jasik, Absorption and dispersion in undoped epitaxial GaSb layer, Mater. Res. Express 5(2), 2018
  • A. Broda, A. Wójcik-Jedlińska, I. Sankowska, M. Wasiak, M. Więckowska, J. Muszalski, A 95-nm-wide Tunable Two-Mode Vertical External Cavity Surface-Emitting Laser, IEEE Photon. Technol. Lett. 29(24), 2215-2218, 2017
     10.1109/LPT.2017.2771361 
  • M. Więckowska, Porównanie metod symulacji właściwości optycznych laserów VCSEL, Elektronika : konstrukcje, technologie, zastosowania 1(9), 39-42, 2017
     10.15199/13.2017.9.10 
  • P. Śpiewak, Termiczna analiza azotkowych laserów VCSEL ze złączem tunelowym, Prz. Elektrotechniczn. 1(8), 29-32, 2017
     10.15199/48.2017.08.07 
  • R. Sarzała, Początek i rozwój półprzewodnikowych laserów VCSEL, Prz. Elektrotechniczn. 1(8), 3-10, 2017
     10.15199/48.2017.08.01 
  • E. Chavez-Angel, P. Komar, G. Jakob, Alloy-Like Behavior of the Thermal Conductivity of Nonsymmetric Superlattices, Nanosc. Microsc. Therm. 21(4), 287-295, 2017
     10.1080/15567265.2017.1354106 
  • P. Gutowski, I. Sankowska, P. Karbownik, D. Pierścińska, O. Serebrennikova, M. Morawiec, E. Pruszyńska-Karbownik, K. Gołaszewska-malec, K. Pierściński, J. Muszalski, M. Bugajski, MBE growth of strain-compensated InGaAs/InAlAs/InP quantum cascade lasers, J. Cryst. Growth 466, 22-29, 2017
     10.1016/j.jcrysgro.2017.02.031 
  • Ł. Piskorski, M. Marciniak, J. Walczak, Simulation and optimization of 2.6–2.8 μm GaSb-based VCSELs, Opt. Quant. Electron. 49(5), 199, 2017
     10.1007/s11082-017-1027-2 
  • A. Szerling, R. Kruszka, K. Kosiel, M. Wzorek, K. Golaszewska, A. Trajnerowicz, P. Karbownik, M. Kuc, T. Czyszanowski, M. Walczakowski, N. Pałka, Al<sub>0.45</sub>Ga<sub>0.55</sub>As / GaAs -based single-mode distributed-feedback quantum-cascade lasers with surface gratings, J. Nanophotonics 11(2), 026004, 2017
     10.1117/1.JNP.11.026004 
  • P. Komar, G. Jakob, <i>CADEM</i>: calculate X-ray diffraction of epitaxial multilayers, J. Appl. Crystallogr. 50(1), 288-292, 2017
     10.1107/s1600576716018379 
  • M. Wasiak, J. Walczak, M. Motyka, F. Janiak, A. Trajnerowicz, A. Jasik, Below-band-gap absorption in undoped GaAs at elevated temperatures, Opt. Mater. 64, 137-141, 2017
     10.1016/j.optmat.2016.11.028 
  • P. Śpiewak, A. Sokół, M. Wasiak, R. Sarzała, Impact of AlN-aperture on optical and electrical properties of nitride VCSEL, Opt. Quant. Electron. 49(3), 114, 2017
     10.1007/s11082-017-0945-3 
  • E. Pruszyńska-Karbownik, P. Gutowski, I. Sankowska, P. Karbownik, M. Bugajski, Field distribution in waveguide of mid-infrared strain-compensated InAlAs/InGaAs/InP quantum cascade laser, Opt. Quant. Electron. 49(2), 75, 2017
     10.1007/s11082-017-0894-x 
  • P. Śpiewak, M. Wasiak, M. Kuc, S. Stańczyk, P. Perlin, W. Nakwaski, R. Sarzała, Impact of thermal crosstalk between emitters on power roll-over in nitride-based blue-violet laser bars, Semicond. Sci. Technol. 32(2), 025008, 2017
     10.1088/1361-6641/aa513b 
  • M. Dems, Monolithic High-Contrast Gratings: Why Do They Not Scatter Light?, J. Lightwave Technol. 35(2), 159-165, 2017
     10.1109/JLT.2016.2633224 
  • T. Czyszanowski, M. Gębski, M. Dems, M. Wasiak, R. Sarzała, K. Panajotov, Subwavelength grating as both emission mirror and electrical contact for VCSELs in any material system, Sci. Rep. 7(1), 40348, 2017
     10.1038/srep40348 
  • P. Komar, P. Śpiewak, M. Gębski, J. A. Lott, M. Wasiak, Current dependence of resistances and capacitances in a vertical-cavity surface-emitting laser, Scientific Bulletin TUL. Physics 38, 53-60, 2017
  • L. Frasunkiewicz, T. Czyszanowski, H. Thienpont, K. Panajotov, Polarization- and Modal-Control in a Vertical-Cavity Surface-Emitting Laser With an External-Cavity Formed by a Liquid Crystal Overlay, J. Lightwave Technol. 34(23), 5437-5443, 2016
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  • A. Sokół, R. Sarzała, Comparative analysis of thermal problems in GaAs- and InP-based 1.3-μm VECSELs, Opt. Appl. 43(2), 325-341, 2013
     10.5277/oa130212 
  • T. Czyszanowski, R. Sarzała, M. Dems, J. Walczak, M. Wasiak, W. Nakwaski, V. Iakovlev, N. Volet, E. Kapon, Spatial-Mode Discrimination in Guided and Antiguided Arrays of Long-Wavelength VCSELs, IEEE J. Sel. Topics in Quantum Electron. 19(5), 2013
  • M. Gębski, M. Dems, J. . Chen, Q. J. Wang, D. H. Zhang, T. Czyszanowski, The Influence of Imperfections and Absorption on the Performance of a GaAs/AlOx High-Contrast Grating for Monolithic Integration With 980 nm GaAs-Based VCSELs, J. Lightwave Technol. 31(23), 3853-3858, 2013
  • A. Jasik, P. Wasylczyk, M. Dems, P. Wnuk, A. Wójcik-Jedlińska, K. Regiński, Ł. Zinkiewicz, K. Hejduk, A passively mode-locked, self-starting femtosecond Yb:KYW laser with a single highly dispersive semiconductor double-chirped mirror for dispersion compensation, Laser Phys. Lett. 10(8), 2013
  • K. Panajotov, Y. Xie, M. Dems, C. Belmonte, H. Thienpont, J. Beeckman, K. Neyts, Vertical-cavity surface-emitting laser emitting circularly polarized light, Laser Phys. Lett. 10(10), 2013
  • S. Morawiec, R. Sarzała, W. Nakwaski, A new structure of nitride light-emitting diodes without polarization effects, Physica B: Condensed Matter 407(19), 3960-3964, 2012
     10.1016/j.physb.2012.06.018 
  • R. Sarzała, T. Czyszanowski, M. Wasiak, M. Dems, Ł. Piskorski, W. Nakwaski, K. Panajotov, Numerical Self-Consistent Analysis of VCSELs, Advances in Optical Technologies 2012, 1-17, 2012
     10.1155/2012/689519 
  • R. Sarzała, Ł. Piskorski, P. Szczerbiak, R. Kudrawiec, W. Nakwaski, An attempt to design long-wavelength (&gt;2 μm) InP-based GaInNAs diode lasers, Applied Physics A: Materials Science and Processing 108(3), 521-528, 2012
     10.1007/s00339-012-6977-4 
  • D. Żak, W. Nakwaski, Transport fononów przez nadstruktury GaAs/AlAs, Elektronika : konstrukcje, technologie, zastosowania, 2012
  • A. Sokół, R. Sarzała, Analiza zagadnień cieplnych w optycznie pompowanych laserach typu VECSEL, Elektronika : konstrukcje, technologie, zastosowania 2012(nr 10), 25-28, 2012
  • M. Kuc, R. Sarzała, Wpływ wzajemnego oddziaływania cieplnego emiterów promieniowania na pracę matrycy zbudowanej na bazie GaN, Elektronika : konstrukcje, technologie, zastosowania 2012(nr 9), 41-44, 2012
  • A. Sirbu, N. Volet, A. Mereuta, J. Lyytikainen, J. Rautiainen, O. Okhotnikov, J. Walczak, M. Wasiak, T. Czyszanowski, A. Caliman, Q. Zhu, V. Iakovlev, E. Kapon, Wafer-Fused Optically Pumped VECSELs Emitting in the 1310-nm and 1550-nm Wavebands, Advances in Optical Technologies 2011, 1-8, 2011
     10.1155/2011/209093 
  • T. Czyszanowski, M. Dems, R. Sarzała, W. Nakwaski, K. Panajotov, Precise Lateral Mode Control in Photonic Crystal Vertical-Cavity Surface-Emitting Lasers, IEEE J. Quantum. Electron. 47(10), 1291-1296, 2011
     10.1109/JQE.2011.2159363 
  • Ł. Bielarczyk, W. Nakwaski, R. Sarzała, Self-consistent thermal model of semiconductor disk lasers, J. Optoelectron. Adv. M. 13(1-2), 59-64, 2011
  • M. Wasiak, Mathematical rigorous approach to simulate an over-threshold VCSEL operation, Physica E: Low-Dimensional Systems and Nanostructures 43(8), 1439-1444, 2011
     10.1016/j.physe.2011.03.022 
  • R. Sarzała, M. Wasiak, W. Nakwaski, Temperature increase within quantum-cascade lasers originating from their incomplete soldering, Photonics Letters of Poland 3(2), 52-54, 2011
     10.4302/plp.2011.2.03 
  • P. Kowalczewski, M. Kuc, Ł. Piskorski, R. Sarzała, W. Nakwaski, Simulation of an operation of zinc oxide light-emitting diodes, Microw. Opt. Techn. Let. 53(9), 2086-2090, 2011
     10.1002/mop.26175 
  • R. Sarzała, W. Nakwaski, Structure modifications of oxide‐confined GaInNAs VCSELs for the second‐generation optical‐fibre communication, Physica Status Solidi C - Conferences 8(5), 1601-1604, 2011
     10.1002/pssc.201000697 
  • E. Pruszyńska-Karbownik, B. Mroziewicz, Measurements and analysis of antireflection coatings reflectivity related to external cavity lasers, Opt. Commun. 284(1), 373-375, 2011
     10.1016/j.optcom.2010.08.062 
  • W. Nakwaski, VCSEL structures used to suppress higher-order transverse modes, Opto-Electron. Rev. 19(1), 119-129, 2011
     10.2478/s11772-010-0075-y 
  • M. Motyka, F. Janiak, J. Misiewicz, M. Wasiak, K. Kosiel, M. Bugajski, Determination of energy difference and width of minibands in GaAs/AlGaAs superlattices by using Fourier transform photoreflectance and photoluminescence, Opto-Electron. Rev. 19(2), 151-154, 2011
     10.2478/s11772-011-0021-7 
  • Ł. Piskorski, R. Sarzała, W. Nakwaski, Investigation of temperature characteristics of modern InAsP/InGaAsP multi-quantum-well TJ-VCSELs for optical fibre communication, Opto-Electron. Rev. 19(3), 320-326, 2011
     10.2478/s11772-011-0026-2 
  • R. Kruszka, M. Ekielski, K. Golaszewska, K. Korwin-Mikke, Z. Sidor, M. Wzorek, D. Pierścińska, R. Sarzała, T. Czyszanowski, A. Piotrowska, GaAs/AlGaAs photonic crystals for VCSEL-type semiconductor lasers, Opto-Electron. Rev. 19(1), 51-55, 2011
     10.2478/s11772-010-0068-x 
  • R. Sarzała, W. Nakwaski, Current spreading modification to enhance single-fundamental-mode VCSEL operation at higher temperatures, Opto-Electron. Rev. 19(2), 131-136, 2011
     10.2478/s11772-011-0018-2 
  • M. Dems, Modelling of high-contrast grating mirrors. The impact of imperfections on their performance in VCSELs, Opto-Electron. Rev. 19(3), 340-345, 2011
     10.2478/s11772-011-0027-1 
  • A. Sirbu, N. Volet, A. Mereuta, J. Lyytikainen, J. Rautiainen, O. Okhotnikov, J. Walczak, M. Wasiak, T. Czyszanowski, A. Caliman, Q. Zhu, V. Iakovlev, E. Kapon, Wafer-Fused Optically Pumped VECSELs Emitting in the 1310-nm and 1550-nm Wavebands, Advances in Optical Technologies 2011, 2011
  • W. Nakwaski, VCSEL structures used to suppress higher-order transverse modes, Opto-Electron. Rev., 2011
  • W. Nakwaski, R. Sarzała, Why is it so difficult to reach the single fundamental transverse-mode operation in detuned oxide-confined VCSELs?, Opt. Appl. 41(1), 7-14, 2011
  • R. Sarzała, P. Szczerbiak, R. Kudrawiec, Lasery z obszarami czynnymi z rozcieńczonych azotków na podłożu InP emitujące w zakresie średniej podczerwieni, Elektronika : konstrukcje, technologie, zastosowania 2011(nr 10), 82-84, 2011
  • P. Kowalczewski, M. Kuc, Ł. Piskorski, R. Sarzała, W. Nakwaski, Model diody elektroluminescencyjnej z ZnO, Elektronika : konstrukcje, technologie, zastosowania 2011(nr 9), 76-78, 2011
  • M. Kuc, R. Sarzała, A. Brozi, Analiza skuteczności stosowania przekładek (heat-spreaderów) do poprawy odprowadzania strumienia ciepła z półprzewodnikowych emiterów światła, Elektronika : konstrukcje, technologie, zastosowania 2011(nr 9), 72-75, 2011
  • S. Morawiec, R. Sarzała, W. Nakwaski, Próba zniwelowania wpływu naprężeń mechanicznych na działanie azotkowych diod elektroluminescencyjnych, Elektronika : konstrukcje, technologie, zastosowania 2011(nr 9), 70-72, 2011
  • A. Sokół, R. Sarzała, Thermal problems in arsenide VECSELs, Scientific Bulletin TUL. Physics 32(No. 1105), 53-63, 2011
  • M. Kuc, R. Sarzała, Modelowanie cieplno-elektrycznych właściwości emiterów promieniowania i ich matryc opartych na materiałach azotkowych, Elektronika : konstrukcje, technologie, zastosowania 2011(nr 9), 66-69, 2011
  • R. Sarzała, M. Wasiak, Thermal-electrical modelling of quantum cascade lasers, Prz. Elektrotechniczn. 87(10), 177-179, 2011
  • M. Dems, Propagacja fali elektromagnetycznej w falowodzie wykonanym w planarnym krysztale fotonicznym do zastosowań w diodzie o emisji krawędziowej, Elektronika : konstrukcje, technologie, zastosowania 9, 40-42, 2011
  • W. Nakwaski, P. Kowalczewski, R. Sarzała, Photonic crystal used to increase extraction efficiencyof ZnO light-emitting diodes, Photonics Letters of Poland 2(4), 186-188, 2010
     10.4302/plp.2010.4.15 
  • Y. Ding, W. Fan, B. S. Ma, D. Xu, S. F. Yoon, S. Liang, L. J. Zhao, M. Wasiak, T. Czyszanowski, W. Nakwaski, Microphotoluminescence investigation of InAs quantum dot active region in 1.3 μm vertical cavity surface emitting laser structure, J. Appl. Phys. 108(7), 073111, 2010
     10.1063/1.3490236 
  • Y. Ding, W. Fan, B. S. Ma, D. Xu, S. F. Yoon, S. Liang, L. J. Zhao, M. Wasiak, T. Czyszanowski, W. Nakwaski, Microphotoluminescence investigation of InAs quantum dot active region in 1.3 μm vertical cavity surface emitting laser structure, J. Appl. Phys. 108, 073111-073111-5, 2010
  • M. Kuc, R. Sarzała, W. Nakwaski, Physics of mode selectivity of vertical-cavity surface-emitting diode lasers, J. Appl. Phys. 108(4), 044501, 2010
     10.1063/1.3460814 
  • R. Sarzała, Ł. Piskorski, Comparative analysis of lasing performance of oxide-confined and proton-implanted vertical-cavity surface-emitting diode lasers, Applied Physics A: Materials Science and Processing 102(2), 359-366, 2010
     10.1007/s00339-010-5992-6 
  • M. Dems, I.-S. Chung, P. Nyakas, S. Bischoff, K. Panajotov, Numerical Methods for modeling Photonic-Crystal VCSELs, Opt. Express 18(15), 16042, 2010
     10.1364/OE.18.016042 
  • T. Czyszanowski, Thermal properties and wavelength analysis of telecom oriented photonic-crystal VCSELs, IEE P. - Optoelectron. 18(1), 56-62, 2010
  • K. Panajotov, M. Dems, Photonic crystal vertical-cavity surface-emitting lasers with true photonic bandgap, Opt. Lett. 35(6), 829, 2010
     10.1364/OL.35.000829 
  • M. Żujewski, W. Nakwaski, Sensitivity of a VCSEL threshold performance to inaccuracies in its manufacturing, Opto-Electron. Rev. 18(2), 181-189, 2010
     10.2478/s11772-010-0012-0 
  • T. Czyszanowski, Thermal properties and wavelength analysis of telecom oriented photonic-crystal VCSELs, Opto-Electron. Rev. 18(1), 56-62, 2010
     10.2478/s11772-009-0022-y 
  • M. Żujewski, W. Nakwaski, Sensitivity of a VCSEL threshold performance to inaccuracies in its manufacturing, Opto-Electron. Rev. 18(2), 181-189, 2010
  • M. Rak, A. Brozi, J. ŻMIJA, Estimation of surface supersaturation in Monte Carlo simulations of single crystal growt, Journal of Achievements of Materials and Manufacturing Engineering 41(1-2), 91-95, 2010
  • W. Nakwaski, Comparative analysis of methods used to suppress higher-order transverse modes in vertical-cavity surface-emitting diode lasers, Elektronika : konstrukcje, technologie, zastosowania 51, 32-34, 2010
  • W. Nakwaski, R. Sarzała, M. Kuc, Mody laserów złączowych z poprzecznym rezonatorem (typu VCSEL), Elektronika : konstrukcje, technologie, zastosowania 2010(nr 1), 14-16, 2010
  • R. Sarzała, Wpływ montażu lasera kaskadowego na wzrost temperatury w jego wnętrzu, Elektronika : konstrukcje, technologie, zastosowania 2010(nr 10), 102-106, 2010
  • M. Wasiak, R. Sarzała, W. Nakwaski, Właściwości cieplne wybranych konstrukcji laserów kaskadowych, Elektronika : konstrukcje, technologie, zastosowania 2010(nr 1), 32-34, 2010
  • M. Kuc, R. Sarzała, Model termiczny lasera azotkowego, Elektronika : konstrukcje, technologie, zastosowania 2010(nr 10), 83-86, 2010
  • P. Kowalczewski, W. Nakwaski, R. Sarzała, Photonic crystal used to increase extraction efficiency of ZnO light-emitting diodes, Photonics Letters of Poland 2(4), 186-188, 2010
  • A. Szerling, P. Karbownik, K. Kosiel, J. Kubacka-Traczyk, E. Pruszyńska-Karbownik, M. Płuska, M. Bugajski, Mid-Infrared GaAs/AlGaAs Quantum Cascade Lasers Technology, Acta Phys. Pol. A 116(Supplement), S-45-S-47, 2009
     10.12693/aphyspola.116.s-45 
  • E. Pruszyńska-Karbownik, P. Karbownik, A. Szerling, K. Kosiel, M. Bugajski, The Study of Thermal Properties of GaAs/AlGaAs Quantum Cascade Lasers, Acta Phys. Pol. A 116(Supplement), S-60-S-61, 2009
     10.12693/aphyspola.116.s-60 
  • K. Kosiel, A. Szerling, J. Kubacka-Traczyk, P. Karbownik, E. Pruszyńska-Karbownik, M. Bugajski, Molecular Beam Epitaxy Growth for Quantum Cascade Lasers, Acta Phys. Pol. A 116(5), 806-813, 2009
     10.12693/APhysPolA.116.806 
  • Ł. Piskorski, R. Sarzała, W. Nakwaski, Enhanced single-fundamental LP01 mode operation of 650-nm GaAs-based GaInP/AlGaInP quantum-well VCSELs, Applied Physics A: Materials Science and Processing 98(3), 651-657, 2009
     10.1007/s00339-009-5459-9 
  • T. Czyszanowski, R. Sarzała, M. Dems, H. Thienpont, W. Nakwaski, K. Panajotov, Strong modes discrimination and low threshold in cw regime of 1300 nm AlInGaAs/InP VCSEL induced by photonic crystal, Physica Status Solidi (A) Applications and Materials 206(7), 1396-1403, 2009
     10.1002/pssa.200824499 
  • M. Wasiak, Quantum-enhanced uniformity of carrier injection into successive quantum wells of multi-quantum-well structures, Physica E: Low-Dimensional Systems and Nanostructures 41(7), 1253-1257, 2009
     10.1016/j.physe.2009.02.013 
  • T. Czyszanowski, R. Sarzała, M. Dems, W. Nakwaski, H. Thienpont, K. Panajotov, Optimal photonic-crystal parameters assuring single-mode operation of 1300 nm AlInGaAs vertical-cavity surface-emitting laser, J. Appl. Phys. 105(9), 093102, 2009
     10.1063/1.3115449 
  • M. Dems, Semivectorial method based on effective index for VCSEL analysis, J. Opt. Soc. Am. B 26(4), 792, 2009
     10.1364/JOSAB.26.000792 
  • D. Xu, C. Tong, S. F. Yoon, W. Fan, D. H. Zhang, M. Wasiak, Ł. Piskorski, K. Gutowski, R. Sarzała, W. Nakwaski, Room-temperature continuous-wave operation of the In(Ga)As/GaAs quantum-dot VCSELs for the 1.3 µm optical-fibre communication, Semicond. Sci. Technol. 24(5), 055003, 2009
     10.1088/0268-1242/24/5/055003 
  • Ł. Piskorski, M. Wasiak, R. Sarzała, W. Nakwaski, Structure optimisation of modern GaAs-based InGaAs/GaAs quantum-dot VCSELs for optical fibre communication, Opto-Electron. Rev. 17(3), 217-224, 2009
     10.2478/s11772-008-0067-3 
  • J. LeClech, M. Ziegler, J. Mukherjee, J. W. Tomm, T. Elsaesser, J.-P. Landesman, B. Corbett, J. G. Mclnerney, J. P. Reithmaier, S. Deubert, A. Forchel, W. Nakwaski, R. Sarzała, Microthermography of diode lasers: The impact of light propagation on image formation, J. Appl. Phys. 105(1), 014502, 2009
     10.1063/1.3055356 
  • M. Dems, Semi-Vectorial Method Based on Effective Index for VCSEL Analysis, J. Opt. Soc. Am. B 26, 792-796, 2009
  • T. Czyszanowski, R. Sarzała, M. Dems, W. Nakwaski, H. Thienpont, K. Panajotov, Optimal Photonic-Crystal Parameters Assuring Single-Mode Operation of 1300nm AlInGaAs Vertical-Cavity Surface-Emitting Laser, J. Appl. Phys. 105, 093102, 2009
  • T. Czyszanowski, R. Sarzała, M. Dems, H. Thienpont, W. Nakwaski, K. Panajotov, Strong Modes Discrimination and Low Threshold in Cw Regime of 1300nm AlInGaAs/InP VCSEL Induced by Photonic Crystal, Phys. Stat. Sol. (a) 206, 1396-1403, 2009
  • A. Pabjańczyk, R. Sarzała, M. Wasiak, M. Bugajski, Kwantowe lasery kaskadowe - podstawy fizyczne, Elektronika : konstrukcje, technologie, zastosowania 2009(nr 5), 30-43, 2009
  • M. Dems, Semivectorial method based on effective index for VCSEL analysis, J. Opt. Soc. Am. B B/Vol. 26 No.4, 792–796, 2009
  • M. Kuc, R. Sarzała, Thermal model of nitride edge-emitting laser diodes, Opt. Appl. 39(4), 663-672, 2009
  • A. Wójcik-Jedlińska, M. Wasiak, K. Kosiel, M. Bugajski, Photoluminescence characterization of AlGaAs/GaAs test superlattices used for optimization of quantum cascade laser technology, Opt. Appl. 39, 967-974, 2009
  • S. Morawiec, P. Kowalczewski, R. Sarzała, An impact of the electrical pumping scheme on some VCSEL performance characteristics, Opt. Appl. 39(4), 691-699, 2009
  • K. Tkacz, R. Sarzała, W. Nakwaski, Performance characteristics of variously detuned VCSELs, Opt. Appl. 39(4), 729-737, 2009
  • K. Kosiel, M. Bugajski, A. Szerling, J. Kubacka-Traczyk, P. Karbownik, E. Pruszyńska-Karbownik, J. Muszalski, A. Łaszcz, P. Romanowski, M. Wasiak, W. Nakwaski, I. Makarowa, P. Perlin, 77K operation of AlGaAs/GaAs quantum cascade laser at 9 um, Photonics Letters of Poland 1(no 1), 16-18, 2009
  • Ł. Piskorski, M. Wasiak, R. Sarzała, W. Nakwaski, Tuning effects in optimisation of GaAs-based InGaAs/GaAs quantum-dot VCSELs, Opt. Commun. 281(11), 3163-3170, 2008
     10.1016/j.optcom.2008.02.011 
  • M. Dems, T. Czyszanowski, H. Thienpont, K. Panajotov, Highly birefringent and dichroic photonic crystal VCSEL design, Opt. Commun. 281(11), 3149-3152, 2008
     10.1016/j.optcom.2008.01.060 
  • M. Ziegler, J. W. Tomm, T. Elsaesser, G. Erbert, F. Bugge, W. Nakwaski, R. Sarzała, Visualization of heat flows in high-power diode lasers by lock-in thermography, Appl. Phys. Lett. 92(10), 103513, 2008
     10.1063/1.2898199 
  • Ł. Piskorski, R. Sarzała, W. Nakwaski, Computer simulation of an operation of the GaInP/AlGaInP QW VCSELs: Excitation of various transverse LPij modes, Microelectr. J. 39(3-4), 638-640, 2008
     10.1016/j.mejo.2007.07.049 
  • T. Czyszanowski, R. Sarzała, M. Dems, H. Thienpont, K. Panajotov, Threshold characteristics of bottom-emitting long wavelength VCSELs with photonic-crystal within the top mirror, Opt. Quant. Electron. 40(2-4), 149-154, 2008
     10.1007/s11082-008-9198-5 
  • T. Czyszanowski, M. Dems, H. Thienpont, K. Panajotov, Modal gain and confinement factors in top- and bottom-emitting photonic-crystal VCSEL, J. Phys. D: Appl. Phys. 41(8), 085102, 2008
     10.1088/0022-3727/41/8/085102 
  • K. Gutowski, R. Sarzała, W. Nakwaski, Threshold analysis of highly detuned long-wavelength GaAs-based GaInNAsSb/GaNAsQWVCSELs, Microelectr. J. 39(3-4), 641-643, 2008
     10.1016/j.mejo.2007.07.048 
  • P. Karbownik, R. Sarzała, Structure optimisation of short-wavelength ridge-waveguide InGaN/GaN diode lasers, Opto-Electron. Rev. 16(1), 27-33, 2008
     10.2478/s11772-007-0035-3 
  • W. Nakwaski, Principles of VCSEL designing, Opto-Electron. Rev. 16(1), 18-26, 2008
     10.2478/s11772-007-0028-2 
  • K. Gutowski, R. Sarzała, W. Nakwaski, Investigation of operational characteristics and possibility of obtaining highly detuned GaInNAsSb VCSEL, str. 445-448, Styczeń 2008
     10.1002/pssc.200777451 
  • Ł. Piskorski, R. Sarzała, W. Nakwaski, Analysis of anticipated performance of 650-nm GaInP/AlGaInP quantum-well GaAs-based VCSELs at elevated temperatures, Opto-Electron. Rev. 16(1), 34-41, 2008
     10.2478/s11772-007-0027-3 
  • M. Dems, T. Czyszanowski, H. Thienpont, K. Panajotov, Highly Birefringent and Dichroic Photonic-Crystal VCSEL Design, Opt. Commun. 281, 3149-3152, 2008
  • K. Gutowski, R. Sarzała, W. Nakwaski, Threshold analysis of highly detuned long-wavelength GaAs-based GaInNAsSb/GaNAsQWVCSELs., Microelectr. J. No 39, 641-643, 2008
  • Ł. Piskorski, R. Sarzała, W. Nakwaski, Computer simulation of an operation of the GaInP/AlGaInP QW VCSELs: excitation of various transverse LPij modes, Microelectr. J. No.39(3-4), 638-640, 2008
  • K. Gutowski, R. Sarzała, Computer simulation of tuned and detuned GaInNAsSb QW VCSELs for long-wavelength applications:, Mater. Sci. 26(1), 45-53, 2008
  • M. Ziegler, J. W. Tomm, T. Elsaesser, G. Erbert, F. Bugge, W. Nakwaski, R. Sarzała, Visualization of heat flows in high-power diode lasers by lock-in thermography., Appl. Phys. Lett. 92, 103513, 2008
  • Ł. Piskorski, R. Sarzała, W. Nakwaski, Analysis of anticipated performance of 650-nm GaInP/AlGaInP quantum-well GaAs-based VCSELs at elevated temperatures., Opto-Electron. Rev. 16(1), 34-41, 2008
  • Ł. Piskorski, M. Wasiak, R. Sarzała, W. Nakwaski, Tuning effects in optimisation of GaAs-based InGaAs/GaAs quantum-dot VCSELs., Opt. Commun. 281(11), 3163–3170, 2008
  • P. Karbownik, R. Sarzała, Structure optimisation of short-wavelength ridge-waveguide InGaN/GaN diode lasers:, Opto-Electron. Rev. 16(1), 68-74, 2008
  • W. Nakwaski, Principles of VCSEL designing, Opto-Electron. Rev. 16(1), 18-26, 2008
  • E. Gęsikowska, W. Nakwaski, An impact of multi-layered structures of modern optoelectronic devices on their thermal properties, Opt. Quant. Electron. 40(2-4), 205-216, 2007
     10.1007/s11082-007-9151-z 
  • T. Czyszanowski, R. Sarzała, Ł. Piskorski, M. Dems, M. Wasiak, W. Nakwaski, K. Panajotov, Comparison of Usability of Oxide Apertures and Photonic Crystals Used to Create Radial Optical Confinements in 650-nm GaInP VCSELs, IEEE J. Quantum. Electron. 43(11), 1041-1047, 2007
     10.1109/JQE.2007.904492 
  • T. Czyszanowski, M. Wasiak, R. Sarzała, W. Nakwaski, Exactness of simplified scalar optical approaches in modelling a threshold operation of possible nitride vertical-cavity surface-emitting diode lasers, Physica Status Solidi (A) Applications and Materials 204(10), 3562-3573, 2007
     10.1002/pssa.200622559 
  • A. Kozłowska, M. Szymański, E. Pruszyńska-Karbownik, M. Bugajski, R. Pomraenke, C. Lienau, J. Renard, A. Maląg, Tailoring of optical mode profiles of high-power diode lasers evidenced by near-field photocurrent spectroscopy, Appl. Phys. Lett. 91(10), 101103, 2007
     10.1063/1.2779846 
  • T. Czyszanowski, M. Dems, K. Panajotov, Optimal Parameters of Photonic-Crystal Vertical-Cavity Surface-Emitting Diode Lasers, J. Lightwave Technol. 25(9), 2331-2336, 2007
     10.1109/JLT.2007.901520 
  • M. Dems, K. Panajotov, Modeling of single- and multimode photonic-crystal planar waveguides with the plane-wave admittance method, Appl. Phys. B: Lasers Opt. 89(1), 19-23, 2007
     10.1007/s00340-007-2756-x 
  • T. Czyszanowski, W. Nakwaski, Comparison of Exactness of Scalar and Vectorial Optical Methods Used to Model a VCSEL Operation, IEEE J. Quantum. Electron. 43(5), 399-406, 2007
     10.1109/JQE.2006.894738 
  • Ł. Piskorski, R. Sarzała, W. Nakwaski, Self-consistent model of 650 nm GaInP/AlGaInP quantum-well vertical-cavity surface-emitting diode lasers, Semicond. Sci. Technol. 22(6), 593-600, 2007
     10.1088/0268-1242/22/6/002 
  • R. Sarzała, W. Nakwaski, GaInNAsSb/GaNAs quantum-well VCSELs: Modeling and physical analysis in the 1.50−1.55 μm wavelength range, J. Appl. Phys. 101(7), 073103, 2007
     10.1063/1.2719009 
  • T. Czyszanowski, M. Dems, K. Panajotov, Impact of the hole depth on the modal behaviour of long wavelength photonic crystal VCSELs, J. Phys. D: Appl. Phys. 40(9), 2732-2735, 2007
     10.1088/0022-3727/40/9/009 
  • R. Kotyński, M. Dems, K. Panajotov, Waveguiding losses of micro-structured fibres—plane wave method revisited, Opt. Quant. Electron. 39(4-6), 469, 2007
     10.1007/s11082-007-9092-6 
  • M. Dems, T. Czyszanowski, K. Panajotov, Numerical analysis of high Q-factor photonic-crystal VCSELs with plane-wave admittance method, Opt. Quant. Electron. 39(4-6), 419-426, 2007
     10.1007/s11082-007-9090-8 
  • T. Czyszanowski, M. Dems, H. Thienpont, K. Panajotov, Modal behavior of photonic-crystal vertical-cavity surface-emitting diode laser analyzed with Plane Wave Admittance Method, Opt. Quant. Electron. 39(4-6), 427-433, 2007
     10.1007/s11082-007-9087-3 
  • P. Bienstman, S. Selleri, L. Rosa, H. P. Uranus, W. C. L. Hopman, R. Costa, A. Melloni, L. C. Andreani, J. P. Hugonin, P. Lalanne, D. Pinto, S. S. A. Obayya, M. Dems, K. Panajotov, Modelling leaky photonic wires: A mode solver comparison, Opt. Quant. Electron. 38(9-11), 731-759, 2007
     10.1007/s11082-006-9025-9 
  • T. Czyszanowski, W. Nakwaski, How exact are simplified scalar approaches to optical fields in oxide-confined stripe-geometry diode lasers?, Opto-Electron. Rev. 15(2), 88-97, 2007
     10.2478/s11772-007-0001-0 
  • T. Czyszanowski, M. Dems, K. Panajotov, Single mode condition and modes discrimination in photonic-crystal 1.3 μm AlInGaAs/InP VCSEL, Opt. Express 15(9), 5604, 2007
     10.1364/OE.15.005604 
  • T. Czyszanowski, M. Dems, H. Thienpont, K. Panajotov, Optimal radii of photonic crystal holes within DBR mirrors in long wavelength VCSEL, Opt. Express 15(3), 1301, 2007
     10.1364/OE.15.001301 
  • T. Czyszanowski, M. Dems, K. Panajotov, Impact of the Hole Depth on the Modal Behaviour of Long Wavelength Photonic Crystal VCSELs, J. Phys. D: Appl. Phys. 40, 2732-2735, 2007
  • T. Czyszanowski, M. Dems, K. Panajotov, Single Mode Condition and Modes Discrimination in Photonic-Crystal 1.3 μm AlInGaAs/InP VCSEL, Opt. Express 15, 5604-5609, 2007
  • M. Dems, K. Panajotov, Modeling of Single- and Multimode Photonic-Crystal Planar waveguides with Plane-Wave Admittance Method, Appl. Phys. B: Lasers Opt. 89, 19-23, 2007
  • T. Czyszanowski, M. Dems, K. Panajotov, Optimal Parameters of Photonic-Crystal Vertical-Cavity Surface-Emitting Diode Lasers, J. Lightwave Technol. 25, 2331-2336, 2007
  • T. Czyszanowski, R. Sarzała, Ł. Piskorski, M. Dems, M. Wasiak, W. Nakwaski, K. Panajotov, Comparison of Usability of Oxide Apertures and Photonic Crystals Used To Create Radial Optical Confinements in 650-nm GaInP VCSELs, IEEE J. Quantum. Electron. 43, 1041-1047, 2007
  • Ł. Piskorski, R. Sarzała, W. Nakwaski, Self-Consistent Model of the 650-nm GaInP/AlGaInP Quantum-Well Vertical-Cavity Surface-Emitting Diode Lasers, Semicond. Sci. Technol. 22 (6), 593-600, 2007
  • R. Sarzała, Optimization of Oxide-Confined Vertical-Cavity Surface-Emitting Diode Lasers, Semicond. Sci. Technol. 22, 113-118, 2007
  • R. Sarzała, W,, Nakwaski,, GaInNAsSb/GaNAs Quantum-Well VCSELs: Modeling and Physical Analysis in the 1.50-1.55 μm Wavelength Range, J. Appl. Phys. 101, 073103, 2007
  • T. Czyszanowski, M. Dems, K. Panajotov, Optimal parameters of photonic-crystal vertical-cavity surface-emitting diode lasers., J. Lightwave Technol. 25 No. 9, 2331-2335, 2007
  • T. Czyszanowski, W. Nakwaski, Scalar and vectorial approaches to cavity modes of the GaAs-based 1.3-μm oxide-confined edge emitting diode laser., Opt. Appl. 37 No. 3, 209-218, 2007
  • T. Czyszanowski, M. Wasiak, R. Sarzała, W. Nakwaski, Exactness of simplified scalar optical approaches in modelling a threshold operation of possible nitride vertical-cavity surface-emitting diode lasers., Physica Status Solidi (A) Applications and Materials 204 No. 10, 3562-3573, 2007
  • T. Czyszanowski, W. Nakwaski, Comparison of exactness of scalar and vectorial optical methods used to model a VCSEL operation., IEEE J. Quantum. Electron. 43 No. 5, 399-406, 2007
  • R. Sarzała, W. Nakwaski, GaInNAsSb/GaNAs quantum-well VCSELs: modeling and physical analysis in the 1.50 – 1.55 μm wavelength range., J. Appl. Phys. 101, 073103, 2007
  • T. Czyszanowski, W. Nakwaski, How exact are simplified scalar approaches to optical fields in oxide-confined stripe-geometry diode lasers?, Opto-Electron. Rev. 15 (2), 88-97, 2007
  • R. Sarzała, Optimization of oxide-confined vertical-cavity surface-emitting diode lasers, Semicond. Sci. Technol. 22(2), 113-118, 2006
     10.1088/0268-1242/22/2/019 
  • M. Ziegler, F. Weik, J. W. Tomm, T. Elsaesser, W. Nakwaski, R. Sarzała, D. Lorenzen, J. Meusel, A. Kozłowska, Transient thermal properties of high-power diode laser bars, Appl. Phys. Lett. 89(26), 263506, 2006
     10.1063/1.2424644 
  • R. Sarzała, W. Nakwaski, Separate-confinement-oxidation vertical-cavity surface-emitting laser structure, J. Appl. Phys. 99(12), 123110, 2006
     10.1063/1.2206129 
  • R. Sarzała, W. Nakwaski, Structure Optimisation of a Possible 1.5-μm GaAs-based Vertical-cavity Surface-emitting Laser Diode with the GaInNAsSb/GaNAs Quantum-well Active Region, Opt. Quant. Electron. 38(4-6), 293-311, 2006
     10.1007/s11082-006-0030-9 
  • R. Sarzała, W. Nakwaski, Physical Analysis of a Possibility to Reach the 1.30-μm Emission from the GaAs-Based VCSELs with the InGaAs/GaAs Quantum-Well Active Regions and the Intentionally Detuned Optical Cavities, Opt. Quant. Electron. 38(4-6), 325-337, 2006
     10.1007/s11082-006-0035-4 
  • T. Czyszanowski, W. Nakwaski, Validity of Scalar Approaches to Radiation Modes of the GaAs-Based 1.3-μm Diode Lasers Designed for the Optical–Fibre Communication, Opt. Quant. Electron. 38(4-6), 349-360, 2006
     10.1007/s11082-006-0033-6 
  • M. Dems, W. Nakwaski, Modelling of High-Contrast Photonic Crystal Slabs Using the Novel Extension of the Effective Index Method, Opt. Appl. 36, 51-56, 2006
  • T. Czyszanowski, W. Nakwaski, Usability limits of the scalar effective frequency method used to determine modes distributions in oxide-confined vertical-cavity surface-emitting diode lasers., J. Phys. D: Appl. Phys. 39, 30-35, 2006
  • M. Ziegler, F. Weik, J. W. Tomm, T. Elsaesser, W. Nakwaski, R. Sarzała, D. Lorenzen, J. Meusel, A. Kozłowska, Transient thermal properties of high- power diode laser bars., Appl. Phys. Lett. 89, 263506, 2006
  • R. Sarzała, W. Nakwaski, Separate-confinement-oxidation vertical-cavity surface-emitting laser structure., J. Appl. Phys. 99 s.123110-1(9), 2006
  • T. Czyszanowski, W. Nakwaski, Usability limits of the scalar effective frequency method used to determine modes distributions in oxide-confined vertical-cavity surface-emitting diode lasers, J. Phys. D: Appl. Phys. 39(1), 30-35, 2005
     10.1088/0022-3727/39/1/006 
  • R. Sarzała, Designing strategy to enhance mode selectivity of higher-output oxide-confined vertical-cavity surface-emitting lasers, Applied Physics A: Materials Science and Processing 81(2), 275-283, 2005
     10.1007/s00339-005-3251-z 
  • J. Galczak, R. Sarzała, W. Nakwaski, The modified k·p method to investigate polarization effects in nitride quantum-well devices, Physica E: Low-Dimensional Systems and Nanostructures 25(4), 504-514, 2005
     10.1016/j.physe.2004.08.002 
  • M. Dems, R. Kotyński, K. Panajotov, Plane Wave Admittance Method - a novel approach for determining the electromagnetic modes in photonic structures, Opt. Express 13(9), 3196, 2005
     10.1364/OPEX.13.003196 
  • R. Sarzała, An impact of a localization of an oxide aperture within a VCSEL cavity on its lasing threshold., Opt. Appl. 35(no. 3), 636-644, 2005
  • W. Nakwaski, Simplified modelling of photonic-crystal-confined vertical-cavity surface-emitting diode lasers., Opt. Appl. 35, 579-589, 2005
  • R. Sarzała, Physical analysis of an operation of GaInAs/GaAs quantum-well vertical-cavity surface-emitting diode lasers emitting in the 1.3mm wavelength range., Opt. Appl. 35(no. 2), 225-240, 2005
  • M. Wasiak, M. Bugajski, W. Nakwaski, Envelope function description of quantum cascade laser electronic states., Opt. Appl. 35, 651-654, 2005
  • M. Dems, R. Kotyński, K. Panajotov, PlaneWave Admittance Method- a novel approach for determining the electromagnetic modes in photonic structures, Opt. Express 13, 3196-3207, 2005
  • J. Galczak, R. Sarzała, W. Nakwaski, The modified kp approach to investigate polarization effects in nitride quantum-well devices., Physica E: Low-Dimensional Systems and Nanostructures 25, 504-514, 2005
  • R. Sarzała, W. Nakwaski, Optimisation of GaAs-based (GaIn)(NAs)//GaAs vertical-cavity surface-emitting diode lasers for high-temperature operation in 1.3-μm optical-fibre communication systems, IEE P. - Optoelectron. 151(5), 417-420, 2004
     10.1049/ip-opt:20040936 
  • R. P. S. a, W. Nakwaski, Optimization of 1.3 µm GaAs-based oxide-confined (GaIn)(NAs) vertical-cavity surface-emitting lasers for low-threshold room-temperature operation, Journal of Physics Condensed Matter 16(31), S3121-S3140, 2004
     10.1088/0953-8984/16/31/009 
  • R. Sarzała, Modeling of the threshold operation of 1.3-/spl mu/m GaAs-based oxide-confined (InGa)As-GaAs quantum-dot vertical-cavity surface-emitting lasers, IEEE J. Quantum. Electron. 40(6), 629-639, 2004
     10.1109/JQE.2004.828228 
  • A. Tomczyk, R. Sarzała, T. Czyszanowski, M. Wasiak, W. Nakwaski, Fully self-consistent threshold model of one-dimensional arrays of edge-emitting nitride diode lasers, Semicond. Sci. Technol. 19(8), 997-1004, 2004
     10.1088/0268-1242/19/8/008 
  • R. Sarzała, P. Mendla, M. Wasiak, P. Maćkowiak, M. Bugajski, W. Nakwaski, Comprehensive self-consistent three-dimensional simulation of an operation of the GaAs-based oxide-confined 1.3-μm quantum-dot (InGa)As/GaAs vertical-cavity surface-emitting lasers, Opt. Quant. Electron. 36(4), 331-347, 2004
     10.1023/B:OQEL.0000019967.68715.3d 
  • M. Dems, W. Nakwaski, Thermal and molecular stresses in multi-layered structures of nitride devices, Semicond. Sci. Technol. 19(5), 667-667, 2004
     10.1088/0268-1242/19/5/C01 
  • P. Maćkowiak, R. Sarzała, M. Wasiak, W. Nakwaski, Cascade nitride VCSEL designs with tunnel junctions, Applied Physics A: Materials Science and Processing 78(3), 315-322, 2004
     10.1007/s00339-003-2195-4 
  • A. Tomczyk, R. Sarzała, W. Nakwaski, Fully Self-Consistent Threshold Model of One-Dimensional Arrays of in-Line Nitride Diode Lasers, Semicond. Sci. Technol. 19, 997-1004, 2004
  • P. Maćkowiak, R. Sarzała, M. Wasiak, W. Nakwaski, Cascade Nitride VCSEL Designs with a Tunnel Junctions, Appl. Phys. A: Mat. Sci. \& Process. 78, 315-322, 2004
  • W. Nakwaski, M. Wasiak, P. Maćkowiak, W. Bedyk, M. Osiński, A. Passaseo, V. Tasco, M. . Todaro, M. D. Vittorio, R. Joray, J. . Chen, R. . Stanley, A. Fiore, Oxidation Kinetics of AlAs and (AlGa)As Layers in Arsenide-Based Diode Lasers: Comparative Analysis of Available Experimental Data, Semicond. Sci. Technol. 19, 333-341, 2004
  • P. Maćkowiak, R. Sarzała, M. Wasiak, W. Nakwaski, Nitride VCSEL design for continuous-wave operation of higher-order optical modes, Applied Physics A: Materials Science and Processing 77(6), 761-768, 2003
     10.1007/s00339-003-2131-7 
  • W. Nakwaski, M. Wasiak, P. Maćkowiak, W. Bedyk, M. O. ski, A. Passaseo, V. Tasco, M. . Todaro, M. D. Vittorio, R. Joray, J. . Chen, R. . Stanley, A. Fiore, Oxidation kinetics of AlAs and (AlGa)As layers in GaAs-based diode laser structures: comparative analysis of available experimental data, Semicond. Sci. Technol. 19(3), 333-341, 2003
     10.1088/0268-1242/19/3/007 
  • P. Maćkowiak, R. P. S. a, M. Wasiak, W. Nakwaski, Radial optical confinement in nitride VCSELs, J. Phys. D: Appl. Phys. 36(17), 2041-2045, 2003
     10.1088/0022-3727/36/17/303 
  • M. Dems, W. Nakwaski, Thermal and molecular stresses in multi-layered structures of nitride devices, Semicond. Sci. Technol. 18(8), 733-737, 2003
     10.1088/0268-1242/18/8/303 
  • M. Wasiak, M. Bugajski, R. Sarzała, P. Maćkowiak, T. Czyszanowski, W. Nakwaski, Output power saturation in InAs/GaAs quantum dot lasers, Physica Status Solidi C - Conferences, 1351-1354, 2003
     10.1002/pssc.200303091 
  • P. Maćkowiak, R. Sarzała, M. Wasiak, W. Nakwaski, Design guidelines for fundamental-mode-operated cascade nitride VCSELs, IEEE Photon. Technol. Lett. 15(4), 495-497, 2003
     10.1109/LPT.2003.809314 
  • W. Nakwaski, P. MAC´KOWIAK, [], Opt. Quant. Electron. 35(11), 1037-1054, 2003
     10.1023/A:1026068725681 
  • R. Sarzała, [], Opt. Quant. Electron. 35(7), 675-692, 2003
     10.1023/A:1023977203373 
  • R. Sarzała, P. Maćkowiak, M. Wasiak, T. Czyszanowski, W. Nakwaski, Structure optimisation of 1.3 μm (GaIn)(NAs)∕GaAs in-plane lasers, IEE P. - Optoelectron. 150(1), 56, 2003
     10.1049/ip-opt:20030040 
  • R. Sarzała, P. Maćkowiak, M. Wasiak, T. Czyszanowski, W. Nakwaski, Simulation of performance characteristics of GaInNAs vertical-cavity surface-emitting lasers, IEE P. - Optoelectron. 150(1), 83, 2003
     10.1049/ip-opt:20030041 
  • A. Tomczyk, R. Sarzała, T. Czyszanowski, M. Wasiak, W. Nakwaski, Fully Self-Consistent Three-Dimensional Model of Edge-Emitting Nitride Diode Lasers, Opto-Electron. Rev. 11, 65-75, 2003
  • W. Nakwaski, R. Sarzała, M. Wasiak, T. Czyszanowski, P. Maćkowiak, Single-Photon Devices in Quantum Cryptography, Opto-Electron. Rev. 11, 127-132, 2003
  • P. Maćkowiak, T. Czyszanowski, R. Sarzała, M. Wasiak, W. Nakwaski, Designing of Possible Structures of Nitride Vertical-Cavity Surface-Emitting Lasers, Opto-Electron. Rev. 11, 119-126, 2003
  • R. Sarzała, P. Maćkowiak, M. Wasiak, T. Czyszanowski, W. Nakwaski, Simulation of Threshold Characteristics of GaInNAs Diode Lasers, Opto-Electron. Rev. 11, 139-142, 2003
  • M. Dems, W. Nakwaski, Thermal and Molecular Stresses in Multi-Layered Structures of Nitride Devices, Semicond. Sci. Technol. 18, 733-737, 2003
  • P. Maćkowiak, R. Sarzała, M. Wasiak, W. Nakwaski, Radial Optical Confinement in Nitride VCSELs, J. Phys. D: Appl. Phys. 26, 2041-2045, 2003
  • W. Nakwaski, Some Unexpected Behaviours of Nitride Devices Following From Special Features of Nitride Semiconductors, Opto-Electron. Rev. in preparation, 2003
  • W. Nakwaski, P. Maćkowiak, How To Reach a Single-Fundamental-Mode Operation of Nitride VCSELs, Proc. SPIE accepted, 2003
  • M. Osiński, T. Svimonishvili, W. Nakwaski, Analytical Approach To Steam Oxidation of AlAs in Cylindrically Symmetric Mesa Structures, Appl. Phys. Lett. submitted, 2003
  • S. P. Łepkowski, W. Nakwaski, M. Bugajski, Equivalent Electrical Parameters of Semiconductor Bragg Mirrors and Their Application in Modelling of Vertical-Cavity Surface-Emitting Lasers, IEEE J. Quantum. Electron. submitted, 2003
  • M. Szymański, B. Mroziewicz, W. Nakwaski, Threshold Analysis of Circular-Grating Semiconductor Lasers, Electron Technology submitted, 2003
  • W. Nakwaski, M. Osiński, Study of a Room-Temperature Operation of 1.3-μm Etched-Well Vertical-Cavity Surface-Emitting Lasers, IEEE Proc. Optoelectr. submitted, 2003
  • W. Nakwaski, M. Szymański, B. Mroziewicz, Cylindrical Electromagnetic Waves in Circular-Grating Semiconductor Lasers, Electron Technology submitted, 2003
  • P. Maćkowiak, R. Sarzała, M. Wasiak, W. Nakwaski, Design Guidelines for Fundamental-Mode-Operated Cascade Nitride VCSELs, IEEE Photon. Technol. Lett. 15, 495-497, 2003
  • R. Sarzała, P. Maćkowiak, M. Wasiak, T. Czyszanowski, W. Nakwaski, Structure Optimization of 1.3-μm (GaIn)(NAs)/GaAs in-Plane Lasers, IEEE Proc. Optoelectr. 150, 56-58, 2003
  • R. Sarzała, P. Maćkowiak, M. Wasiak, T. Czyszanowski, W. Nakwaski, Simulation of Performance Characteristics of GaInNAs Vertical-Cavity Surface-Emitting Lasers, IEEE Proc. Optoelectr. 150, 83-85, 2003
  • M. Wasiak, M. Bugajski, R. Sarzała, P. Maćkowiak, T. Czyszanowski, W. Nakwaski, Output Power Saturation in InAs/GaAs Quantum Dot Lasers, Phys. Stat. Sol., 1351-1354, 2003
  • P. Maćkowiak, R. Sarzała, M. Wasiak, W. Nakwaski, Nitride VCSEL Design for Continuous-Wave Operation of Higher-Order Optical Modes, Appl. Phys. A: Mat. Sci. \& Process. 77, 761-768, 2003
  • W. Nakwaski, P. Maćkowiak, M. Wasiak, R. Sarzała, T. Czyszanowski, Higher‐Order Transverse Modes in Possible Nitride VCSELs, Physica Status Solidi C - Conferences, 48-51, 2002
     10.1002/pssc.200390095 
  • R. P. S. a, P. Maćkowiak, W. Nakwaski, Temperature-enhanced radial current spreading in possible VCSEL structures of nitride lasers, Semicond. Sci. Technol. 17(3), 255-260, 2002
     10.1088/0268-1242/17/3/313 
  • T. Szoplik, W. Urbańczyk, W. Nakwaski, B. Mroziewicz, T. Woliński, H. Malak, Rozmowa o Fotonice, Postępy Fiz. 53, 149-155, 2002
  • R. Sarzała, P. Maćkowiak, W. Nakwaski, Temperature-Enhanced Radial Current Spreading in Possible VCSEL Structures of Nitride Lasers, Semicond. Sci. Technol. 17, 255-260, 2002
  • W. Nakwaski, P. Maćkowiak, M. Osiński, Simulation of Thermal Properties of Proton-Implanted Top-Surface-Emitting Lasers. I. Analytical Thermal Model, Opt. Appl. 32, 157-172, 2002
  • W. Nakwaski, P. Maćkowiak, M. Osiński, Simulation of Thermal Properties of Proton-Implanted Top-Surface-Emitting Lasers. II. Results and Discussion, Opt. Appl. 32, 173-185, 2002
  • P. Maćkowiak, M. Wasiak, T. Czyszanowski, R. Sarzała, W. Nakwaski, Designing Guidelines for Nitride VCSELs Resonator, Opt. Appl. 32, 493-502, 2002
  • M. Wasiak, M. Bugajski, E. Machowska-Podsiadło, T. J. Ochalski, J. Kątcki, R. Sarzała, P. Maćkowiak, T. Czyszanowski, W. Nakwaski, J. . Chen, U. Oesterle, A. Fiore, M. Ilegems, Optical Gain Saturation Effects in InAs/GaAs Self-Assembled Quantum Dots, Opt. Appl. 32, 291-299, 2002
  • W. Nakwaski, P. Maćkowiak, M. Wasiak, R. Sarzała, T. Czyszanowski, Higher-Order Transverse Modes in Possible Nitride VCSELs, Phys. Stat. Sol., 48-51, 2002
  • T. Czyszanowski, M. Wasiak, P. Maćkowiak, R. Sarzała, W. Nakwaski, Method of Lines - the New Vectorial Approach To Optical Phenomena in Diode Lasers, Opt. Appl. 32, 477-484, 2002
  • R. Sarzała, Computer Simulation of Performance Characteristics of (GaIn)(NAs) Diode Lasers, Opt. Appl. 32, 449-460, 2002
  • M. Rak, M. Izdebski, A. Brozi, Kinetic Monte Carlo study of crystal growth from solution, Comput. Phys. Commun. 138(3), 250-263, 2001
     10.1016/S0010-4655(01)00238-7 
  • M. Osiński, T. Svimonishvili, G. A. Smolyakov, V. A. Smagley, P. Maćkowiak, W. Nakwaski, Temperature and thickness dependence of steam oxidation of AlAs in cylindrical mesa structures, IEEE Photon. Technol. Lett. 13(7), 687-689, 2001
     10.1109/68.930415 
  • T. Czyszanowski, W. Nakwaski, How many quantum wells in nitride lasers?, J. Phys. D: Appl. Phys. 34(15), 2346-2352, 2001
     10.1088/0022-3727/34/15/314 
  • P. Maćkowiak, R. Sarzała, W. Nakwaski, A novel diagonal-current injection VCSEL design proposed for nitride lasers, Semicond. Sci. Technol. 16(7), 598-602, 2001
     10.1088/0268-1242/16/7/313 
  • T. Czyszanowski, W. Nakwaski, Mode transformation enhanced in nitride diode lasers by modification of their buffer layers, J. Phys. D: Appl. Phys. 34(9), 1277-1285, 2001
     10.1088/0022-3727/34/9/301 
  • P. Maćkowiak, W. Nakwaski, Some aspects of designing an efficient nitride VCSEL resonator, J. Phys. D: Appl. Phys. 34(6), 954-958, 2001
     10.1088/0022-3727/34/6/317 
  • T. Czyszanowski, M. Wasiak, W. Nakwaski, Design Considerations for GaAs/(AlGa)As SCH and GRIN-SCH Quantum-Well Laser Structures. 1. The Model, Opt. Appl. 31, 313-323, 2001
  • W. Nakwaski, P. Maćkowiak, Crucial Structure Elements of Possible Nitride Vertical-Cavity Surface-Emitting Lasers, Opt. Appl. 31, 337-349, 2001
  • W. Nakwaski, P. Maćkowiak, M. Osiński, Modeling of Radial Steam Oxidation of AlAs Layers in Cylindrically Symmetric Mesa Structures of Vertical-Cavity Surface-Emitting Lasers, Opt. Appl. 31, 289-299, 2001
  • T. Czyszanowski, M. Wasiak, W. Nakwaski, Design Considerations for GaAs/(AlGa)As SCH and GRIN-SCH Quantum-Well Laser Structures. 2. The Results, Opt. Appl. 31, 325-336, 2001
  • P. Maćkowiak, W. Nakwaski, Some Aspects of Designing Efficient Nitride VCSEL Resonator, J. Phys. D: Appl. Phys. 34, 954-958, 2001
  • T. Czyszanowski, W. Nakwaski, Mode Transformation Enhanced in Nitride Diode Lasers by Buffer Layers Modifications, J. Phys. D: Appl. Phys. 34, 1277-1285, 2001
  • P. Maćkowiak, R. Sarzała, W. Nakwaski, A Novel Diagonal-Current-Injection VCSEL Design Proposed for Nitride Lasers, Semicond. Sci. Technol. 16, 598-602, 2001
  • M. Osiński, T. Svimonishvili, G. A. Smolyakov, V. A. Smagley, P. Maćkowiak, W. Nakwaski, Temperature and Thickness Dependence of Steam Oxidation of AlAs in Cylindrical Mesa Structures, IEEE Photon. Technol. Lett. 13, 687-689, 2001
  • T. Czyszanowski, W. Nakwaski, How Many Quantum Wells in Nitride Lasers ?, J. Phys. D: Appl. Phys. 34, 2346-2352, 2001
  • T. Czyszanowski, W. Nakwaski, Design Considerations for InGaN/GaN/AlGaN Quantum Well Lasers, Opto-Electron. Rev. 9, 367-376, 2001
  • W. Nakwaski, Optical Fields in Complex Multilayered Structures of Modern Semiconductor Optoelectronic Devices, Opto-Electron. Rev. 9, 269-273, 2001
  • T. Czyszanowski, Operation of Arsenide Diode Lasers at Elevated Temperatures, Opt. Appl. 31, 301-311, 2001
  • T. Czyszanowski, Method of Effective Index and Method of Lines for the Analysis of Optical Phenomena in the Edge Emitting (in-Plane) Diode Lasers, Scientific Bulletin of Tech. Univ. of Łódź, Physics 21, 31-38, 2001
  • M. Rak, M. Izdebski, A. Brozi, Kinetic Monte Carlo study of crystal growth from solution, Comput. Phys. Commun. 138(3), 250-263, 2001
  • P. Maćkowiak, W. Nakwaski, Designing guidelines for possible continuous-wave-operating nitride vertical-cavity surface-emitting lasers, J. Phys. D: Appl. Phys. 33(6), 642-653, 2000
     10.1088/0022-3727/33/6/309 
  • W. Nakwaski, Simulation of Optical Phenomena in Vertical-Cavity Surface-Emitting Lasers. I. Fundamental Principles (invited Paper), Opto-Electron. Rev. 8, 11 -18., 2000
  • W. Nakwaski, Simulation of Optical Phenomena in Vertical-Cavity Surface-Emitting Lasers. II. Models (invited Paper), Opto-Electron. Rev. 8, 19-28, 2000
  • P. Maćkowiak, W. Nakwaski, An Impact of Mismatch-Related Phenomena on a Room-Temperature Operation of Nitride VCSELs, Opt. Appl. 30, 125-140, 2000
  • P. Maćkowiak, W. Nakwaski, Designing Guidelines for Possible Continuous-Wave-Operating Nitride Vertical-Cavity Surface-Emitting Lasers, J. Phys. D: Appl. Phys. 33, 642-653, 2000
  • W. Nakwaski, P. Maćkowiak, Nitride VCSELs: Close Future Or Distant Prospects ?, Proc. SPIE 4237 (Laser Technology VI: Progress in Lasers), 97-108, 2000
  • M. Osiński, T. Svimonishvili, G. A. Smolyakov, V. A. Smagley, P. Maćkowiak, W. Nakwaski, Simple Theory of Steam Oxidation of AlAs, Proc. SPIE 3896 (SPIE International Symposium on Photonics and Applications, ISPA'99, Singapore 30Nov-3Dec 1999), 534-546, 2000
  • P. Maćkowiak, W. Nakwaski, [], Opt. Quant. Electron. 31(11), 1179-1188, 1999
     10.1023/A:1007011009768 
  • G. A. Smolyakov, V. A. Smaglev, W. Nakwaski, P. G. Eliseev, M. Osiński, Design of InGaN/GaN/AlGaN VCSELs Using the Effective Frequency Method, Proc. SPIE 3625 (Physics and Simulation of Optoelectronic Devices VII), 324-335., 1999
  • E. C. Yu, H. M. Pindera, A. J. Przekwas, G. A. Smolyakov, W. Nakwaski, M. Osiński, Multi-Disciplinary Design Tools for VCSEL Devices and Compact Electronic Packages, Proc. SPIE 3625 (Physics and Simulation of Optoelectronic Devices), 383-394, 1999
  • M. Turowski, E. C. Yu, A. J. Przekwas, W. Nakwaski, M. Osiński, 3-D Simulation of Thermal Phenomena in Arrays of Vertical-Cavity Surface-Emitting Lasers (VCSELs), Electron Technology 32, 220-226, 1999
  • P. Maćkowiak, W. Nakwaski, On a Possible Room-Temperature Operation of Nitride VCSELs, Scientific Bulletin of Tech. Univ. of Łódź, Physics 19, 39-49, 1999
  • W. Nakwaski, R. Sarzała, Transverse modes in gain-guided vertical-cavity surface-emitting lasers, Opt. Commun. 148(1-3), 63-69, 1998
     10.1016/S0030-4018(97)00616-0 
  • W. Nakwaski, R. Sarzała, Transverse Modes in Gain-Guided Vertical-Cavity Surface-Emitting Lasers, Opt. Commun. 148, 63 - 69, 1998
  • W. Nakwaski, M. Osiński, Thermal Properties of Vertical-Cavity Surface-Emitting Semiconductor Lasers, Progr. Opt. XXXVIII, 165-262, 1998
  • E. C. Yu, M. Osiński, W. Nakwaski, M. Turowski, A. J. Przekwas, Thermal Crosstalk in Arrays of Proton-Implanted Top-Surface-Emitting Lasers, Proc. SPIE 3283 (Physics and Simulation of Optoelectronic Devices VI), 384-395, 1998
  • W. Nakwaski, Analiza Trendów Rozwojowych Azotkowych Laserów Złączowych Oraz Możliwości Ich Wytwarzania Na Podłożu GaN, Elektronika 39, 07-10, 1998
  • J. Wilk, R. Sarzała, W. Nakwaski, The Spatial Hole Burning Effect in Gain-Guided Vertical-Cavity Surface-Emitting Lasers, J. Phys. D: Appl. Phys. 31, L11-L15,, 1998
  • P. Maćkowiak, W. Nakwaski, Detailed Threshold Analysis of UV-Emitting Nitride Vertical-Cavity Surface-Emitting Lasers, J. Phys. D: Appl. Phys. 31, 2479-2484, 1998
  • W. Nakwaski, Some Unsolved Problems Associated with Designing of Nitride Lasers (invited Paper), Opto-Electron. Rev. 6, 93-110, 1998
  • W. Nakwaski, A. Brozi, K. Łazarow, P. Maćkowiak, R. Sarzała, Computer Simulations of Operations of Various Designs of Semiconductor Lasers, Scientific Bulletin of Tech. Univ. of Łódź, Physics 18, 51-58, 1998
  • P. Maćkowiak, W. Nakwaski, Prospects for Nitride Vertical-Cavity Surface­-Emitting Lasers, Proc. SPIE 3490 (Optics in Computing, OC'98, Brugge (Belgium) 17­20 June, 1998), 331-334, 1998
  • R. Sarzała, W. Nakwaski, Carrier diffusion inside active regions of gain-guided vertical-cavity surface-emitting lasers, IEE P. - Optoelectron. 144(6), 421-425, 1997
     10.1049/ip-opt:19971300 
  • W. Nakwaski, M. OSIN´SKI, [], Opt. Quant. Electron. 29(9), 883-892, 1997
     10.1023/A:1018525616214 
  • W. Nakwaski, M. OSIN´SKI, [], Opt. Quant. Electron. 29(6), 639-649, 1997
     10.1023/A:1018536423966 
  • W. Nakwaski, W. L. Johnson, M. Osiński, Methodology of Parallelization Used in Simulation of Thermal Behaviour of Large Two-Dimensional Arrays of Semiconductor Lasers, Electron Technology 30, 287-297, 1997
  • W. Nakwaski, R. Sarzała, Verification of Usability of Simple Discrimination Mechanisms for Higher-Order Transverse Modes in Gain-Guided Vertical-Cavity Surface-Emitting Lasers, Electron Technology 30, 298-305, 1997
  • P. Maćkowiak, W. Nakwaski, Threshold Evaluation of GaN/AlGaN/AlN Vertical-Cavity Surface-Emitting Lasers, Electron Technology 30, 314-323, 1997
  • J. Wilk, R. Sarzała, W. Nakwaski, DBR Mirror Properties in Real Operating Conditions of Gain-Guided Vertical-Cavity Surface-Emitting Lasers, Int. J. Optoelectr. 11, 333-337, 1997
  • R. Sarzała, W. Nakwaski, Carrier Diffusion Inside Active-Regions of Gain-Guided Vertical-Cavity Surface-Emitting Lasers, IEEE Proc. Optoelectr. 144, 421-425, 1997
  • W. Nakwaski, Self-Consistent Analytical Models of Semiconductor Vertical-Cavity Surface-Emitting Lasers (invited Paper), Proc. SPIE 3186 (Laser Technology V: Physics and Research and Development Trends), 324-338, 1997
  • W. Nakwaski, R. Sarzała, Higher-Order Transverse Modes in Vertical-Cavity Surface-Emitting Lasers, Proc. SPIE 3320 (Wave and Quantum Aspects of Contemporary Optics), 78-96, 1997
  • W. Nakwaski, Thermal aspects of efficient operation of vertical-cavity surface-emitting lasers, Opt. Quant. Electron. 28(4), 335-352, 1996
     10.1007/BF00287023 
  • W. Nakwaski, Reply To 'Comment on Three-Dimensional Analysis of a Heat-Spreading Phenomenon in Phase-Locked Arrays of Oxide-Isolated Diode Lasers', J. Appl. Phys. 79, 9403, 1996
  • W. Nakwaski, M. Osiński, Thermally Conductive Dielectric Mirrors As a Possible Solution Enabling Continuous Wave Operation of 1.3-μm Vertical-Cavity Surface-Emitting Lasers at Room Temperature, Electron Technology 29, 79-82, 1996
  • R. Sarzała, W. Nakwaski, M. Osiński, Carrier Diffusion in the Active Region of Vertical-Cavity Surface-Emitting Lasers and Its Influence on Their Operation, Electron Technology 29, 83-87, 1996
  • W. Nakwaski, Current spreading and series resistance of proton-implanted vertical-cavity top-surface-emitting lasers, Applied Physics A: Materials Science and Processing 61(2), 123-127, 1995
     10.1007/BF01538377 
  • M. Osiński, W. Nakwaski, Thermal analysis of closely-packed two-dimensional etched-well surface-emitting laser arrays, IEEE J. Sel. Topics in Quantum Electron. 1(2), 681-696, 1995
     10.1109/2944.401258 
  • W. Nakwaski, Effective masses of electrons and heavy holes in GaAs, InAs, A1As and their ternary compounds, Physica B: Condensed Matter 210(1), 1-25, 1995
     10.1016/0921-4526(94)00921-H 
  • R. Sarzała, W. Nakwaski, M. Osiński, Effects of Carrier Diffusion on Thermal Properties of Proton-Implanted Top-Surface-Emitting Lasers (invited Paper), Proc. SPIE 2399 (Physics and Simulation of Optoelectronic Devices III), 583-604, 1995
  • M. Osiński, W. Nakwaski, Optimization of 1.3-μm Etched-Well Surface-Emitting Laser Design, Proc. SPIE 2399 (Physics and Simulation of Optoelectronic Devices III), 372-383, 1995
  • W. Nakwaski, Effective Masses of Electrons and Heavy Holes in GaAs, InAs, AlAs and Their Ternary Compounds, Physica B 210, 1-25, 1995
  • W. Nakwaski, Current Spreading and Series Resistance of Proton-Implanted Vertical-Cavity Top-Surface-Emitting Lasers, Appl. Phys. A: Mat. Sci. \& Process. 61, 123-127, 1995
  • W. Nakwaski, R. Sarzała, M. Osiński, Computer Simulation of Vertical-Cavity Surface-Emitting Lasers, Scientific Bulletin of Tech. Univ. of Łódź, Physics 15, 145-158, 1995
  • W. Nakwaski, M. Osiński, Current-Spreading in Proton-Implanted Vertical-Cavity Top-Surface-Emitting Lasers, Int. J. Optoelectr. 10, 119-127, 1995
  • W. Nakwaski, M. Osiński, Series Electrical Resistance of Proton-Implanted Vertical-Cavity Top-Surface-Emitting Lasers, Int. J. Optoelectr. 10, 129-137, 1995
  • R. Sarzała, Finite-Element Thermal Model for Monolithic Linear Arrays of GaAs-AlGaAs Strip-Buried-Heterostructure Diode Lasers, Electron Technology 28, 293-299, 1995
  • R. Sarzała, W. Nakwaski, Finite-element thermal model for buried-heterostructure diode lasers, Opt. Quant. Electron. 26(2), 87-95, 1994
     10.1007/BF00558144 
  • W. Nakwaski, M. Osiński, Self-Consistent Thermal-Electrical Modeling of Proton-Implanted Top-Surface-Emitting Semiconductor Lasers (invited Paper), Proc. SPIE 2146 (Physics and Simulation of Optoelectronics Devices II, OE/LASE '94), 365-387, 1994
  • M. Osiński, W. Nakwaski, P. Varangis, Analysis of Current Spreading and Series Resistance in GaAs/AlGaAs Proton-Implanted Top-Surface-Emitting Lasers, Proc. SPIE 2146 (Physics and Simulation of Optoelectronics Devices II, OE/LASE '94), 388-396, 1994
  • M. Osiński, W. Nakwaski, A. Leal, Effective Thermal Conductivity Analysis of Vertical-Cavity Top-Surface-Emitting Lasers with Semiconducting Bragg Mirrors, Proc. SPIE 2147 (Vertical-Cavity Surface-Emitting Arrays), 85-96, 1994
  • W. Nakwaski, M. Osiński, Thermal analysis of GaAs-AlGaAs etched-well surface-emitting double-heterostructure lasers with dielectric mirrors, IEEE J. Quantum. Electron. 29(6), 1981-1995, 1993
     10.1109/3.234461 
  • M. Osiński, W. Nakwaski, Effective thermal conductivity analysis of 1.55 μm InGaAsP/InP vertical-cavity top-surface-emitting microlasers, str. 1015-1016, Maj 1993
     10.1049/el:19930677 
  • W. Nakwaski, M. Osiński, J. Cheng, Spreading resistance in proton‐implanted vertical‐cavity surface‐emitting diode lasers, Appl. Phys. Lett. 61(26), 3101-3103, 1992
     10.1063/1.107974 
  • W. Nakwaski, Hole Mobility in Carbon-Doped GaAs and (AlGa)As, str. K47-K49, Lipiec 1992
     10.1002/pssa.2211320136 
  • R. Sarzała, W. Nakwaski, Thermal analysis of oxide-isolated stripe diode lasers, str. 1447-1462, Czerwiec 1992
     10.1007/BF01975077 
  • A. Brozi, A New Computer Model of the MOCVD Process, The Gas Flow in a Horizontal Reactor, Physica Status Solidi (A) Applications and Materials 129(2), 491-500, 1992
     10.1002/pssa.2211290219 
  • A. Brozi, A New Computer Model of the MOCVD Process, The Active Species Concentrations in a Horizontal Reactor, Physica Status Solidi (A) Applications and Materials 129(2), 501-508, 1992
     10.1002/pssa.2211290220 
  • W. Nakwaski, M. Osiński, Thermal resistance of top-surface-emitting vertical-cavity semiconductor lasers and monolithic two-dimensional arrays, str. 572, 1992
     10.1049/el:19920361 
  • W. Nakwaski, M. Osiński, Thermal analysis of etched-well surface-emitting diode lasers, Microw. Opt. Techn. Let. 4(12), 541-543, 1991
     10.1002/mop.4650041209 
  • W. Nakwaski, M. Osiński, Heat-source distribution in etched-well surface-emitting semiconductor lasers, IEEE Photon. Technol. Lett. 3(11), 979-981, 1991
     10.1109/68.97833 
  • A. Brozi, Method of determining the rotation boundary values in two-dimensional gas flow, Physica Status Solidi (A) Applications and Materials 127(1), K15-K18, 1991
     10.1002/pssa.2211270136 
  • W. Nakwaski, M. Osiński, Thermal properties of etched-well surface-emitting semiconductor lasers, IEEE J. Quantum. Electron. 27(6), 1391-1401, 1991
     10.1109/3.89956 
  • W. Nakwaski, Spreading thermal resistance of a diode-laser heat sink, Opt. Quant. Electron. 23(3), 427-432, 1991
     10.1007/BF00619615 
  • W. Nakwaski, Note to reply of R.F. Ormondroyd, J. Lumin. 46(6), 423, 1990
     10.1016/0022-2313(90)90070-R 
  • W. Nakwaski, Comment on “The dynamic temperature distributions in stripe geometry lasers”, J. Lumin. 46(6), 419-420, 1990
     10.1016/0022-2313(90)90068-M 
  • A. Korzeniowski, W. Nakwaski, Thermal optimization of a construction of a double-heterostructure GaAs/(AlGa)As diode laser, str. 1039-1047, Maj 1990
     10.1007/BF01904640 
  • R. Sarzała, W. Nakwaski, An appreciation of usability of the finite element method for the thermal analysis of stripe-geometry diode lasers, str. 1171-1189, Maj 1990
     10.1007/BF01904651 
  • W. Nakwaski, Three‐dimensional analysis of a heat‐spreading phenomenon in phase‐locked arrays of oxide‐isolated diode lasers, J. Appl. Phys. 67(6), 2711-2715, 1990
     10.1063/1.345459 
  • W. Nakwaski, Thermal model of the catastrophic degradation of high‐power stripe‐geometry GaAs/(AlGa)As double‐heterostructure diode lasers, J. Appl. Phys. 67(4), 1659-1668, 1990
     10.1063/1.345633 
  • W. Nakwaski, Spreading thermal resistance of a diode-laser heat sink, str. 109-114, Styczeń 1990
     10.1007/BF01912073 
  • W. Nakwaski, Correspondence: Considerations on geometry design of surface-emitting laser diodes, str. 129, 1990
     10.1049/ip-j.1990.0023 
  • A. Brozi, A New Computer Model of the MOCVD Process, Physica Status Solidi (A) Applications and Materials 114(2), K167-K169, 1989
     10.1002/pssa.2211140250 
  • W. Nakwaski, Three-dimensional time-dependent thermal model of catastrophic mirror damage in stripe-geometry double-heterostructure GaAs/(AlGa)As diode lasers, Opt. Quant. Electron. 21(4), 331-334, 1989
     10.1007/BF02027303 
  • W. Nakwaski, Thermal conductivity of binary, ternary, and quaternary III‐V compounds, J. Appl. Phys. 64(1), 159-166, 1988
     10.1063/1.341449 
  • S. Pufal, W. Nakwaski, The Monte-Carlo model of a light-emitting diode, Opt. Quant. Electron. 19(5), 289-292, 1987
     10.1007/BF02032686 
  • W. Nakwaski, Thermal properties of buried-heterostructure laser diodes, str. 87, 1987
     10.1049/ip-j.1987.0015 
  • W. Nakwaski, Reply: Thermal model of laser diode arrays, str. 458, 1987
     10.1049/el:19870330 
  • W. Nakwaski, Thermal properties of the Burrus-type light-emitting diode: Part I—The model, IEEE T. Electron. Dev. 33(7), 889-899, 1986
     10.1109/T-ED.1986.22591 
  • W. Nakwaski, Thermal properties of the Burrus-type light-emitting diode: Part II—The results, IEEE T. Electron. Dev. 33(7), 900-907, 1986
     10.1109/T-ED.1986.22592 
  • W. Nakwaski, Thermal model of laser diode arrays, str. 1169, 1986
     10.1049/el:19860800 
  • W. Nakwaski, A. M. Kontkiewicz, Thermal resistance of light-emitting diodes, IEEE T. Electron. Dev. 32(11), 2282-2291, 1985
     10.1109/T-ED.1985.22271 
  • W. Nakwaski, Thermal analysis of the catastrophic mirror damage in laser diodes, J. Appl. Phys. 57(7), 2424-2430, 1985
     10.1063/1.334350 
  • W. Nakwaski, Simple formulae giving the temperature profiles in the stripe-geometry laser diodes with oxide barriers, Opt. Quant. Electron. 16(5), 439-443, 1984
     10.1007/BF00619636 
  • W. Nakwaski, Spreading thermal resistance of the heat-sink of a light-emitting diode, Solid-State Electron. 27(8-9), 823-824, 1984
     10.1016/0038-1101(84)90034-0 
  • W. Nakwaski, Simplified thermal analysis of a laser diode array, str. 266-267, Luty 1984
     10.1070/QE1984v014n02ABEH004865 
  • W. Nakwaski, Dynamical thermal properties of stripe-geometry laser diodes, str. 94, 1984
     10.1049/ip-i-1.1984.0026 
  • W. Nakwaski, A. M. Kontkiewicz, Temperature distribution in a light-emitting diode during a pulse operation, str. 984, 1984
     10.1049/el:19840670 
  • W. Nakwaski, Static thermal properties of broad-contact double-heterostructure laser diodes, Opt. Quant. Electron. 15(6), 513-527, 1983
     10.1007/BF00620020 
  • W. Nakwaski, Dynamical thermal properties of broad-contact double-heterostructure GaAs-(AIGa)As laser diodes, Opt. Quant. Electron. 15(4), 313-324, 1983
     10.1007/BF00619901 
  • W. Nakwaski, Simple formulas giving temperature profiles in active layer of stripe-geometry laser diode without oxide barriers, str. 368, 1983
     10.1049/el:19830255 
  • W. Nakwaski, Threshold current of oxide-insulated stripe laser diodes, str. 348-350, Marzec 1982
     10.1070/qe1982v012n03abeh012183 
  • W. Nakwaski, The thermal properties of a single-heterostructure laser diode supplied with short current pulses, Opt. Quant. Electron. 11(4), 319-327, 1979
     10.1007/BF00619365